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Proceedings Paper

Ion-implanted GaAs
Author(s): Nicolas C. Anderson
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Paper Abstract

This paper presents initial experimentation conducted on optically activated Gallium Arsenide (GaAs) switches when operated at high electric fields. A Nd:YAG laser operating at 1.06 micrometers has been used to initiate conduction in three sizes of planar GaAs switches. The optical energy required for initiation and delays observed prior to collapse into the sustained current mode are discussed. In addition, dark dc and pulsed experimental characterization studies of ion implanted GaAs switches are presented. The switches were implanted up to approximately 1018 carriers/cm3 under the cathode contact region.

Paper Details

Date Published: 9 June 1993
PDF: 8 pages
Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146536
Show Author Affiliations
Nicolas C. Anderson, British Aerospace plc (United Kingdom)

Published in SPIE Proceedings Vol. 1873:
Optically Activated Switching III
R. Aaron Falk, Editor(s)

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