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Proceedings Paper

Fabrication of x-ray masks with 0.15-um level two-dimensional patterns by using highly accurate FIB lithography
Author(s): Shuji Fujiwara; Y. Yamaoka; M. Harada; Junichi Nishino; R. Yuasa; M. Inai; S. Suzuki; T. Tanaka; M. Morigami; Takeo Watanabe; Yoshio Yamashita
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Paper Abstract

A highly accurate focused ion beam (FIB) lithography and its application to the x-ray mask fabrication are discussed. The pattern delineation accuracy in FIB lithography was investigated by drawing various two-dimensional (2-D) test patterns. We could obtain 0.15 micrometers feature resist patterns on the heavy-metal layers of the x-ray mask substrate. FIB lithography suffers little proximity effect and thus various 2-D test patterns were obtained with small distortion. The FIB drawn patterns were precisely transferred into the W absorber layer by the time modulated etching technique. X-ray masks used for the evaluation of the pattern replication accuracy in synchrotron radiation lithography were successfully fabricated.

Paper Details

Date Published: 24 June 1993
PDF: 7 pages
Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146535
Show Author Affiliations
Shuji Fujiwara, SANYO Electric Co., Ltd. (Japan)
Y. Yamaoka, SANYO Electric Co., Ltd. (Japan)
M. Harada, SANYO Electric Co., Ltd. (Japan)
Junichi Nishino, SANYO Electric Co., Ltd. (Japan)
R. Yuasa, SANYO Electric Co., Ltd. (Japan)
M. Inai, SANYO Electric Co., Ltd. (Japan)
S. Suzuki, SANYO Electric Co., Ltd. (Japan)
T. Tanaka, SORTEC Corp. (Japan)
M. Morigami, SORTEC Corp. (Japan)
Takeo Watanabe, SORTEC Corp. (Japan)
Yoshio Yamashita, SORTEC Corp. (Japan)


Published in SPIE Proceedings Vol. 1924:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
David O. Patterson, Editor(s)

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