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Proceedings Paper

Silylation and dry development of e-beam resist
Author(s): Lothar Bauch; Monika Boettcher; A. Wolff; Ulrich A. Jagdhold; I. Ludwig; Georg G. Mehliss
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Paper Abstract

Outgoing from the experience in the photolithography it is investigated to use the resist silylation for a surface imaging method in the EBL. The advantage of this process will be seen in the possible high aspect ratio as it is needed for wafer direct writing.

Paper Details

Date Published: 24 June 1993
PDF: 11 pages
Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146532
Show Author Affiliations
Lothar Bauch, Institut fuer Halbleiterphysik GmbH (Germany)
Monika Boettcher, Institut fuer Halbleiterphysik GmbH (Germany)
A. Wolff, Institut fuer Halbleiterphysik GmbH (Germany)
Ulrich A. Jagdhold, Institut fuer Halbleiterphysik GmbH (Germany)
I. Ludwig, Allresist GmbH (Germany)
Georg G. Mehliss, Allresist GmbH (Germany)


Published in SPIE Proceedings Vol. 1924:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
David O. Patterson, Editor(s)

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