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Proceedings Paper

Accelerated radiation damage testing of x-ray mask membrane materials
Author(s): Philip A. Seese; Kevin D. Cummings; Douglas J. Resnick; Arnold W. Yanof; William A. Johnson; Gregory M. Wells; John P. Wallace
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Paper Abstract

An accelerated test method and resulting metrology data are presented to show the effects of x- ray radiation on various x-ray mask membrane materials. A focused x-ray beam effectively reduces the radiation time to 1/5 of that required by normal exposure beam flux. Absolute image displacement results determined by this method indicate imperceptible movement for boron-doped silicon and silicon carbide membranes at a total incident dose of 500 KJ/cm2, while image displacement for diamond is 50 nm at 150 KJ/cm2 and silicon nitride is 70 nm at 36 KJ/cm2. Studies of temperature rise during the radiation test and effects of the high flux radiation, i.e., reciprocity tests, demonstrate the validity of this test method.

Paper Details

Date Published: 24 June 1993
PDF: 10 pages
Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146527
Show Author Affiliations
Philip A. Seese, Motorola, Inc. (United States)
Kevin D. Cummings, Motorola, Inc. (United States)
Douglas J. Resnick, Motorola, Inc. (United States)
Arnold W. Yanof, Motorola, Inc. (United States)
William A. Johnson, Motorola, Inc. (United States)
Gregory M. Wells, Univ. of Wisconsin/Madison (United States)
John P. Wallace, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 1924:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
David O. Patterson, Editor(s)

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