Share Email Print
cover

Proceedings Paper

X-ray mask metrology: the development of linewidth standards for x-ray lithography
Author(s): Michael T. Postek; Jeremiah R. Lowney; Andras E. Vladar; William J. Keery; Egon Marx; Robert D. Larrabee
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The calibration of masks used in x-ray lithography has been successfully accomplished in the scanning electron microscopy (SEM) by utilizing the transmitted scanning electron detection technique. This has been made possible because these masks present a measurement subject different from most (if not all) other objects used in semiconductor processing because the support membrane is, by design, x-ray transparent. This characteristic can be used as an advantage in electron beam-based mask metrology since, depending upon the incident electron beam energies, substrate composition and substrate thickness, the membrane can also be essentially electron transparent.

Paper Details

Date Published: 24 June 1993
PDF: 15 pages
Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146525
Show Author Affiliations
Michael T. Postek, National Institute of Standards and Technology (United States)
Jeremiah R. Lowney, National Institute of Standards and Technology (United States)
Andras E. Vladar, NIST (United States)
William J. Keery, National Institute of Standards and Technology (United States)
Egon Marx, National Institute of Standards and Technology (United States)
Robert D. Larrabee, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 1924:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
David O. Patterson, Editor(s)

© SPIE. Terms of Use
Back to Top