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Proceedings Paper

0.35-um rule, high-density, full-chip x-ray mask patterning
Author(s): Tatsuo Chijimatsu; Ken'ichi Kawakami; Masafumi Nakaishi; Kazuaki Kondo; Masaaki Nakabayashi; Masaki Yamabe; Kenji Sugishima
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Paper Abstract

We study the dimensional and placement accuracies of masks for X-ray lithography, using a 64 Mbit DRAM as an example. We describe a way to stabilize and control X-ray absorber, and reduce stress induced distortion to within 0.03 micrometers . We improve the accuracy of e- beam writing which takes several hours by automatically calibrating the e-beam deflector periodically and by using a ceramic mask-holder. Placement accuracy was within 0.1 micrometers over a 40 mm square with a 2 hour exposure. We demonstrated that in chip areas with highly regular size and periodicity, we can correct for the proximity effect using only size shifts. In chip areas without high regularity, we used dose correction based on a double-gaussian proximity effect function and improved dimensional accuracy.

Paper Details

Date Published: 24 June 1993
PDF: 12 pages
Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146521
Show Author Affiliations
Tatsuo Chijimatsu, Fujitsu Ltd. (Japan)
Ken'ichi Kawakami, Fujitsu Ltd. (Japan)
Masafumi Nakaishi, Fujitsu Ltd. (Japan)
Kazuaki Kondo, Fujitsu Ltd. (Japan)
Masaaki Nakabayashi, Fujitsu Ltd. (Japan)
Masaki Yamabe, Fujitsu Ltd. (Japan)
Kenji Sugishima, Fujitsu Ltd. (Japan)


Published in SPIE Proceedings Vol. 1924:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
David O. Patterson, Editor(s)

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