Share Email Print
cover

Proceedings Paper

What is required for collimated point-source x-ray lithography to achieve an economically viable throughput?
Author(s): Edward D. Franco; Michael J. Boyle; Jonathan A. Kerner; Louis N. Koppel; Robert D. Ormond
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The wafer throughput performance of collimated point-source proximity x-ray lithography was evaluated for features sizes that range from 0.1 to 0.25 micrometers . We analyzed the performance of parabolic collimating optics that rely on multilayer coatings for their x-ray reflection properties. The resulting x-ray transport properties of the collimator were then used to simulate the performance of a lithography system that incorporated a laser produced plasma x-ray source, a lithographic mask, photoresist, and staging subsystems. These system studies make it clear that modest advances in source intensity, mask technology, and photoresist sensitivity are required for point source proximity x-ray lithography to achieve economically viable wafer throughputs of 50 six-inch wafer levels per hour.

Paper Details

Date Published: 24 June 1993
PDF: 10 pages
Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146520
Show Author Affiliations
Edward D. Franco, Advanced Research and Applications Corp. (United States)
Michael J. Boyle, Advanced Research and Applications Corp. (United States)
Jonathan A. Kerner, Advanced Research and Applications Corp. (United States)
Louis N. Koppel, Advanced Research and Applications Corp. (United States)
Robert D. Ormond, Advanced Research and Applications Corp. (United States)


Published in SPIE Proceedings Vol. 1924:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
David O. Patterson, Editor(s)

© SPIE. Terms of Use
Back to Top