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Proceedings Paper

Effects of illumination system aberrations on proximity XRL images
Author(s): Jerry Z.Y. Guo; Jiabei Xiao; Franco Cerrina; Whitson G. Waldo
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Paper Abstract

The aberrations of a typical condenser system for proximity X-ray lithography are obtained through ray-tracing and their effect on the overlay and linewidth control is analyzed. The main effect of the illumination systems aberrations is run-out error due to the slope of the wavefront aberration and the error is of the order of 2 nm.

Paper Details

Date Published: 24 June 1993
PDF: 15 pages
Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146516
Show Author Affiliations
Jerry Z.Y. Guo, Univ. of Wisconsin/Madison (United States)
Jiabei Xiao, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)
Whitson G. Waldo, Motorola, Inc. (United States)


Published in SPIE Proceedings Vol. 1924:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
David O. Patterson, Editor(s)

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