Share Email Print
cover

Proceedings Paper

Absorber roughness effect in XRL image formation
Author(s): Jerry Z.Y. Guo; Franco Cerrina
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The effect of absorber sidewall roughness on image formation in proximity X-ray lithography is studied based on simulation of the propagation of X-rays within the absorber and the diffraction of light over a proximity gap. We conclude that the absorber sidewall roughness only causes very small linewidth variation and it has the positive effect of suppressing ghost lines because of the reduction of high frequency components in the input field, which is especially important for opaque features.

Paper Details

Date Published: 24 June 1993
PDF: 13 pages
Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146515
Show Author Affiliations
Jerry Z.Y. Guo, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 1924:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
David O. Patterson, Editor(s)

© SPIE. Terms of Use
Back to Top