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Proceedings Paper

Fabrication of high-density SRAM chips using mix-and-match x-ray lithography
Author(s): John F. Conway; C. N. Alcorn; D. D. Patel; James A. Ricker; R. C. Yandow; S. E. Liang; Alex L. Flamholz
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Paper Abstract

As part of the Defense Advanced Lithography Program (DALP), IBM has fabricated 0.35 micrometers high-density static random access memory (SRAM) chips with all critical levels being exposed using synchrotron X-ray lithography. X-ray exposures for the four critical levels (isolation, gate, contact holes, and metal 1) were performed at the Advanced Lithography Facility (ALF) at the IBM East Fishkill, New York site. Nonlithographic processing and noncritical level optical exposures were performed in the Very Large Scale Integration (VLSI) pilot line at the IBM Manassas, Virginia site. Extensive alignment and process latitude studies were conducted to determine the best operating points in preparation for the full product SRAM runs. Overlay error, dose and gap latitude, etch bias control, and electrical test results will be presented and compared to results obtained with optical lithography.

Paper Details

Date Published: 24 June 1993
PDF: 11 pages
Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146513
Show Author Affiliations
John F. Conway, IBM Federal Systems Co. (United States)
C. N. Alcorn, IBM Federal Systems Co. (United States)
D. D. Patel, IBM Corp. (United States)
James A. Ricker, IBM Federal Systems Co. (United States)
R. C. Yandow, IBM Federal Systems Co. (United States)
S. E. Liang, IBM Corp. (United States)
Alex L. Flamholz, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 1924:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
David O. Patterson, Editor(s)

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