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Proceedings Paper

Dual exposure (e-beam and i-line) of OCG-895i resist
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Paper Abstract

A process is described in which OCG-895i resist is exposed using both e-beam and i-line optical exposures. This dual exposure allows efficient writing of patterns requiring both fine geometries and large areas in a single lithographic layer. The unique aspect of this process is that the two exposure methods use completely independent developers. This allows the optical exposures to be aligned directly to the e-beam exposed resist, eliminating the need for 'zero- level' alignment marks. E-beam features as small as 200 nm lines and spaces, connected by large photo-exposed pads, have been fabricated. The process presented here results in e-beam contrast of 4.8, with insignificant unexposed film loss. The photo-exposure characteristics are unchanged by the e-beam exposure and develop process. The application of this process to the fabrication of surface acoustic wave devices is discussed.

Paper Details

Date Published: 24 June 1993
PDF: 9 pages
Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146507
Show Author Affiliations
Richard J. Bojko, Cornell Univ. (United States)
Graham M. Pugh, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 1924:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
David O. Patterson, Editor(s)

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