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Proceedings Paper

Suppression of resist heating effect by multiple electron-beam exposure on GaAs substrates
Author(s): Hiroyuki Minami; Hirofumi Nakano; Kazuhiko Sato; Hirozo Takano
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Paper Abstract

The multiple exposure technique in electron beam (EB) lithography has been studied from standpoints of resist sensitivity, contrast, dissolution rate, linewidth and edge roughness delineating 0.1 micrometers pattern on the resist. The increase of the dissolution rate, the improvement of the sensitivity and the change in the contrast have been observed in multiple exposure. These phenomena, which are different from the case of Variable-shaped EB lithography, are considered to be caused by the suppression of thermal crosslinking.

Paper Details

Date Published: 24 June 1993
PDF: 10 pages
Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146506
Show Author Affiliations
Hiroyuki Minami, Mitsubishi Electric Corp. (Japan)
Hirofumi Nakano, Mitsubishi Electric Corp. (Japan)
Kazuhiko Sato, Mitsubishi Electric Corp. (Japan)
Hirozo Takano, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 1924:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
David O. Patterson, Editor(s)

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