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Proceedings Paper

Highly accurate calibration method of electron-beam cell projection lithography
Author(s): Yoshinori Nakayama; Yasunari Sohda; Norio Saitou; Hiroyuki Itoh
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Paper Abstract

A novel calibration method of electron-optics in cell projection method was proposed. The electron-optics of the cell projection method requires more severe reduction ratio and rotation adjustments than the conventional variable-shaped method. This method uses a calibration aperture pattern fabricated in the same silicon shaping mask. The reduction ratio and the rotation of the cell mask have been calibrated within 1% and within several m-rad, respectively. Such a silicon shaping mask was fabricated by new processes using SOI wafer. In the delineation experiment, an ULSI pattern corresponding to 256-Mbit DRAM gate pattern having 0.2 micrometers minimum feature size was exposed. The stitching error of each shot was smaller than 0.02 micrometers .

Paper Details

Date Published: 24 June 1993
PDF: 10 pages
Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146503
Show Author Affiliations
Yoshinori Nakayama, Hitachi, Ltd. (Japan)
Yasunari Sohda, Hitachi, Ltd. (Japan)
Norio Saitou, Hitachi, Ltd. (Japan)
Hiroyuki Itoh, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 1924:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
David O. Patterson, Editor(s)

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