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Proceedings Paper

Infrared photocathodes for streak image tubes based on semiconductor heterostructures and superlattices
Author(s): A. S. Chernikov; Eduard L. Nolle; Alexander M. Prokhorov; Emil Vasilievich Russu; Mikhail Ya. Schelev; E. G. Sokol
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Paper Abstract

Photocathodes based on In0.53Ga0.47As/InP heterostructures (HS-photocathodes) with Schottky barriers for a spectral range of 0.9 - 1.6 micrometers were investigated. The maximum external quantum yield was 0.5% at (lambda) equals 1.5 micrometers and dark current was Ied equals 3*10-8 A/cm2. It has been shown that in such photoemitters under reverse bias of about U equals 30 V, the electric field completely penetrates into the working layer of the photocathode. Since the dark current does not depend on the value of the reverse bias, HS-photocathodes may be used for time analyzing tubes to record picosecond pulses with milliwatt peak intensity. To increase the signal/noise ratio we suggest using InP/In0.53Ga0.47As superlattice (SL) for designing a SL-photocathode with internal amplification.

Paper Details

Date Published: 1 January 1993
PDF: 8 pages
Proc. SPIE 1801, 20th International Congress on High Speed Photography and Photonics, (1 January 1993); doi: 10.1117/12.145772
Show Author Affiliations
A. S. Chernikov, General Physics Institute (Russia)
Eduard L. Nolle, General Physics Institute (Russia)
Alexander M. Prokhorov, General Physics Institute (Russia)
Emil Vasilievich Russu, Applied Physics Institute (Moldova)
Mikhail Ya. Schelev, General Physics Institute (Russia)
E. G. Sokol, General Physics Institute (Russia)


Published in SPIE Proceedings Vol. 1801:
20th International Congress on High Speed Photography and Photonics
John Marks Dewey; Roberto G. Racca, Editor(s)

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