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Proceedings Paper

Modeling stress-induced void growth in Al-4wt%Cu lines
Author(s): Stewart E. Rauch; Timothy D. Sullivan
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Paper Abstract

Stress-induced void growth is modeled for the case of a void bounded by two neighbors by invoking the one-dimensional diffusion equation. The resultant equation is then convoluted with an exponential distribution for void spacing to generate the mean void size as a function of time. Volumetric strain, atomic diffusivity and activation energy are then extracted for a given metallization and passivation system by fitting measured mean void size data to the analytical curve.

Paper Details

Date Published: 21 May 1993
PDF: 12 pages
Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); doi: 10.1117/12.145471
Show Author Affiliations
Stewart E. Rauch, IBM Hopewell Junction (United States)
Timothy D. Sullivan, IBM Essex Junction (United States)


Published in SPIE Proceedings Vol. 1805:
Submicrometer Metallization: Challenges, Opportunities, and Limitations
Thomas Kwok; Takamaro Kikkawa; Krishna Shenai, Editor(s)

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