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Proceedings Paper

Impact of interlevel dielectric materials on stress-induced voiding of metal 1
Author(s): H. Z. Chew; C. A. Fieber; P. Kelley; Thiet T. Lai; Vivian Ryan
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Paper Abstract

Stress-induced voiding of 1.2 micrometers wide metal 1 lines is quantified for two different interlevel dielectric schemes. The first involves a multi-step sequence of PETEOS depositions and etchbacks. The second is a PETEOS/siloxane spin-on-glass/PETEOS sandwich. Metal 1 consists of 4500 angstroms of Al (0.75% Si, 0.5% Cu) over 600 angstroms of Ti/TiN. Separate experiments show the stresses in the PETEOS and SOG films are compressive and tensile, respectively. After 2000 hr. at 175 degree(s)C, metal 1 lines covered by the spin-on- glass sandwich dielectric exhibit considerably fewer voids that penetrate <EQ 30% of linewidth and a comparably low density of voids that penetrate 30 - 50% of linewidth. No voids > 50% of linewidth are observed with either dielectric scheme. This result indicates that the spin-on glass is able to reduce the net voiding stresses in the aluminum.

Paper Details

Date Published: 21 May 1993
PDF: 5 pages
Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); doi: 10.1117/12.145470
Show Author Affiliations
H. Z. Chew, AT&T Bell Labs. (United States)
C. A. Fieber, AT&T Bell Labs. (United States)
P. Kelley, AT&T Bell Labs. (United States)
Thiet T. Lai, AT&T Bell Labs. (United States)
Vivian Ryan, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 1805:
Submicrometer Metallization: Challenges, Opportunities, and Limitations
Thomas Kwok; Takamaro Kikkawa; Krishna Shenai, Editor(s)

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