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Proceedings Paper

Sensitivity of s-parameter data of metal semiconductor field effect transistor to the source and gate resistances
Author(s): G. G. Silvestri; Venkata S. Rao Gudimetla
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Paper Abstract

Analytical expressions for the sensitivities of the S-parameters of a MESFET are presented. These expressions are useful for optimizing the gate and source metallization resistances for design of MESFETs. The final expressions are given in terms of general circuit impedances and therefore can be used in analyzing other solid state three terminal active devices.

Paper Details

Date Published: 21 May 1993
PDF: 12 pages
Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); doi: 10.1117/12.145459
Show Author Affiliations
G. G. Silvestri, Oregon Graduate Institute of Science and Technology (United States)
Venkata S. Rao Gudimetla, Oregon Graduate Institute of Science and Technology (United States)


Published in SPIE Proceedings Vol. 1805:
Submicrometer Metallization: Challenges, Opportunities, and Limitations
Thomas Kwok; Takamaro Kikkawa; Krishna Shenai, Editor(s)

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