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Proceedings Paper

Smart-power metallization: issues, challenges, and opportunities
Author(s): Krishna Shenai
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Paper Abstract

Smart-power technologies that provide on-chip integration of power and signal devices offer a unique challenge in process integration. Metallization plays a pivotal role as it critically impacts the performance and reliability of both the signal and power devices. This talk will address the most critical issues pertaining to device performance/reliability and process integration of smart-power technologies based on the experimental data obtained from a variety of metallization systems including TiSi2, LPCVD tungsten, and LPCVD WSi2. The talk will identify the important challenges and opportunities for further work in this technologically vital area.

Paper Details

Date Published: 21 May 1993
PDF: 1 pages
Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); doi: 10.1117/12.145458
Show Author Affiliations
Krishna Shenai, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 1805:
Submicrometer Metallization: Challenges, Opportunities, and Limitations
Thomas Kwok; Takamaro Kikkawa; Krishna Shenai, Editor(s)

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