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Proceedings Paper

Analyzing simulated and measured optical scatter for semiconductor process verification
Author(s): Richard H. Krukar; S. Sohail H. Naqvi; John Robert McNeil; Donald R. Hush; James E. Franke; Thomas M. Niemczyk; David Keller; Richard A. Gottscho; Avi Kornblit
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Paper Abstract

We describe an experiment in which the etch depth of a diffraction grating is measured. A simulated experiment is used to develop and calibrate the measurement technique. A scatterometer was used to measure the diffraction patterns of a set of 5 wafers at 14 die locations. The estimator already developed is then used to find the etch depths at the 70 measured locations. Finally, a scanning force microscope is used as a reference method to validate the scatterometer measurements.

Paper Details

Date Published: 6 May 1993
PDF: 12 pages
Proc. SPIE 1907, Machine Vision Applications in Industrial Inspection, (6 May 1993); doi: 10.1117/12.144813
Show Author Affiliations
Richard H. Krukar, Univ. of New Mexico (United States)
S. Sohail H. Naqvi, Univ. of New Mexico (Pakistan)
John Robert McNeil, Univ. of New Mexico (United States)
Donald R. Hush, Univ. of New Mexico (United States)
James E. Franke, Univ. of New Mexico (United States)
Thomas M. Niemczyk, Univ. of New Mexico (United States)
David Keller, Univ. of New Mexico (United States)
Richard A. Gottscho, AT&T Bell Labs. (United States)
Avi Kornblit, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1907:
Machine Vision Applications in Industrial Inspection
Frederick Y. Wu; Benjamin M. Dawson, Editor(s)

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