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Proceedings Paper

Prospects for short-wavelength laser amplification in Si vapors
Author(s): S. Kotochigova
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Paper Abstract

A simple theoretical model has been proposed to describe the population inversion of the narrow autoionizing levels in Si atoms. The collision process between two initially excited atoms has been employed to populate the high energy levels. The generalized method of the atomic orbitals is applied here to calculate the interatomic potential curves for the Si2 quasi-molecule and evaluate the probability of the energy transfer process. The laser amplification can occur with wavelengths within the ranges 214 - 310 nm and 111 - 122 nm.

Paper Details

Date Published: 4 May 1993
PDF: 4 pages
Proc. SPIE 1810, 9th International Symposium on Gas Flow and Chemical Lasers, (4 May 1993); doi: 10.1117/12.144604
Show Author Affiliations
S. Kotochigova, FORTH/IESL (Greece)


Published in SPIE Proceedings Vol. 1810:
9th International Symposium on Gas Flow and Chemical Lasers

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