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Proceedings Paper

Influence of thermal treatment on photoluminescence of porous Si
Author(s): Peiyi Chen; Yimin Chen; Qi Xiang; Zhimin Tan; Zhijian Li; Liying Han; Jianchen Wang; Jiancun Gao
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Paper Abstract

In this paper we show that PL intensity of porous Si is critically dependent on the behavior of the thermal treatment of porous Si, prepared by anodization, which was carried out in 20% HF solution at a current density of 50 mA/cm2, then annealed at 450 degree(s)C for 20 minutes. The PL results show that the PL intensity of porous Si annealed was degraded by more than an order of magnitude. Some samples made by the same method were covered with Si3N4 or SiO2, no noticeable degradation of their PL intensity was found. The increase of bandwidth and the shift of PL peak positions were also observed. Obviously, the dielectrics, covering porous Si, prevent the degradation of PL whose mechanism is also discussed.

Paper Details

Date Published: 11 May 1993
PDF: 5 pages
Proc. SPIE 1979, 1992 International Conference on Lasers and Optoelectronics, (11 May 1993); doi: 10.1117/12.144175
Show Author Affiliations
Peiyi Chen, Tsinghua Univ. (China)
Yimin Chen, Tsinghua Univ. (China)
Qi Xiang, Tsinghua Univ. (China)
Zhimin Tan, Tsinghua Univ. (China)
Zhijian Li, Tsinghua Univ. (China)
Liying Han, Tsinghua Univ. (China)
Jianchen Wang, Tsinghua Univ. (China)
Jiancun Gao, Tsinghua Univ. (China)


Published in SPIE Proceedings Vol. 1979:
1992 International Conference on Lasers and Optoelectronics

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