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Proceedings Paper

High-power AlGaInP visible laser diodes with both multiquantum barrier and strain-induced active layer
Author(s): Kenji Ikeda; Satoshi Arimoto; Masao Aiga
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Paper Abstract

By employing both multi-quantum barrier (MQB) and strained InGaP active layer including strained multi-quantum well (MQW) into a 670 nm region visible (red) laser diode, cw output power of 60 mW in a fundamental transverse mode oscillation even at 100 degree(s)C has been realized.

Paper Details

Date Published: 11 May 1993
PDF: 6 pages
Proc. SPIE 1979, 1992 International Conference on Lasers and Optoelectronics, (11 May 1993); doi: 10.1117/12.144145
Show Author Affiliations
Kenji Ikeda, Mitsubishi Electric Corp. (Japan)
Satoshi Arimoto, Mitsubishi Electric Corp. (Japan)
Masao Aiga, Mitsubishi Electric Corp. (Japan)

Published in SPIE Proceedings Vol. 1979:
1992 International Conference on Lasers and Optoelectronics
Sui-Sheng Mei; Bingkun Zhou, Editor(s)

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