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Proceedings Paper

Light amplification and modulation in an InGaAsP/InP bistable laser
Author(s): Qin Han; Rong Han Wu; Quanshen Zhang; Honghai Gao; Wen Gao
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Paper Abstract

In this paper, light amplification and frequency modulation of an InGaAsP/InP bistable laser are investigated experimentally. The lowest light power for switching the device on was about 2 (mu) w, and optical digital gain was larger than 30 dB with switch on time being less than 100 ps and switch off time less than 0.5 ns. Based on the rate equation, theoretical analysis shows that the width and height of an injected pulse plays an important role in switch operation and determines the delay time during switch on process along with the level of the current bias. In 3-terminal operation of the device, with the `on' pulse applying to the absorption region, the delay time can be reduced and a modulation frequency over 2 GC is expected.

Paper Details

Date Published: 11 May 1993
PDF: 5 pages
Proc. SPIE 1979, 1992 International Conference on Lasers and Optoelectronics, (11 May 1993); doi: 10.1117/12.144142
Show Author Affiliations
Qin Han, Institute of Semiconductors (China)
Rong Han Wu, Institute of Semiconductors (China)
Quanshen Zhang, Institute of Semiconductors (China)
Honghai Gao, Institute of Semiconductors (China)
Wen Gao, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 1979:
1992 International Conference on Lasers and Optoelectronics
Sui-Sheng Mei; Bingkun Zhou, Editor(s)

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