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Proceedings Paper

Modulation and spectral dynamics in semiconductor quantum-well lasers
Author(s): Bin Zhao; T. R. Chen; Yoshiro Yamada; Y. H. Zhuang; Amnon Yariv
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Paper Abstract

In a practical quantum well structure, the separate confinement heterostructure is usually employed to confine the optical field in the waveguide and the injected carriers in the quantum well region. The fundamental Fermi-Dirac statistics results in that, in addition to the carrier population in the quantum well region, there is also a significant carrier population in the optical confining region (referred to as the state-filling effect in the quantum well structure). The differential gain depends on the rate of increase of the quasi Fermi energies with respect to the increase of injected carrier density. The presence of upper subbands with large density of states tends to clamp the Fermi energies thus leading to a degradation in the differential gain. The state filling effect also significantly affects the amplitude-phase coupling and the spectral linewidth of quantum well lasers as a direct consequence of its influence on the differential gain.

Paper Details

Date Published: 11 May 1993
PDF: 8 pages
Proc. SPIE 1979, 1992 International Conference on Lasers and Optoelectronics, (11 May 1993); doi: 10.1117/12.144141
Show Author Affiliations
Bin Zhao, California Institute of Technology (United States)
T. R. Chen, California Institute of Technology (United States)
Yoshiro Yamada, California Institute of Technology (United States)
Y. H. Zhuang, California Institute of Technology (United States)
Amnon Yariv, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 1979:
1992 International Conference on Lasers and Optoelectronics

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