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Proceedings Paper

New achievements in ultralow-threshold semiconductor lasers
Author(s): T. R. Chen; Bin Zhao; L. E. Eng; Y. H. Zhuang; Amnon Yariv
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Paper Abstract

Various semiconductor laser material system and device structures which have led to the ultralow threshold current (<EQ 1 mA) operation are reviewed with an emphasis on the quantum well (QW), especially strained QW, structures. To date, cw threshold current as low as approximately 1 mA for as cleaved lasers and 0.35 mA (pulsed 0.25 mA) for high reflectivity coated lasers are realized. These low threshold lasers also display excellent dynamic behavior, a direct current modulation bandwidth of 4.6 GHz at a bias current of only 1 mA above threshold has been demonstrated.

Paper Details

Date Published: 11 May 1993
PDF: 9 pages
Proc. SPIE 1979, 1992 International Conference on Lasers and Optoelectronics, (11 May 1993); doi: 10.1117/12.144139
Show Author Affiliations
T. R. Chen, California Institute of Technology (United States)
Bin Zhao, California Institute of Technology (United States)
L. E. Eng, California Institute of Technology (United States)
Y. H. Zhuang, California Institute of Technology (United States)
Amnon Yariv, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 1979:
1992 International Conference on Lasers and Optoelectronics

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