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Proceedings Paper

High-aspect-ratio trench etching
Author(s): James A. Bondur; Ruth E. Bucknall; Fritz Redeker; Jim Su
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Paper Abstract

A high aspect ratio (> 15:1), sub-micron, deep capacitor trench process is demonstrated in an 8 inch Applied Materials P5000E magnetically enhanced reactive ion etcher (MERIE) using HBr/NF3/He-O2 chemistry. Through the insertion of ferro-magnetic sheet material into the pedestal, sub-micron trenches can be etched to depths greater than 10 micrometers , with etch rates > 6000 angstroms/min, uniformity < +/- 5%, profile uniformity 89 +/- 0.5 degree(s) and selectivity to oxide > 40:1. The importance of the wafer surface temperature on trench etch properties is established. Studies indicate that there is a threshold temperature below which the chosen recipe would need to be modified to produce satisfactory trenches.

Paper Details

Date Published: 16 April 1993
PDF: 10 pages
Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142936
Show Author Affiliations
James A. Bondur, Applied Materials, Inc. (United States)
Ruth E. Bucknall, Applied Materials, Inc. (United States)
Fritz Redeker, Applied Materials, Inc. (United States)
Jim Su, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 1803:
Advanced Techniques for Integrated Circuit Processing II
James A. Bondur; Gary Castleman; Lloyd R. Harriott; Terry R. Turner, Editor(s)

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