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Proceedings Paper

Deep trench process performance enhancements in an MERIE reactor
Author(s): Jim Su; Graham W. Hills; Manush Birang; James A. Bondur; T. Fukamachi; S. Ohki; S. Kitamura
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Paper Abstract

The development of a 16 Mb DRAM capable, deep trench etch in an applied materials P5000E, 200 mm, reactor is discussed in this paper. In order to meet the stringent device requirements extensive system modification, better process control tool development, and process optimization were necessary. The system modification activities have included: (1) a monopolar electrostatic chuck in place of the normal mechanical clamp to reduce trench profile tilt at the wafer edge, (2) an increase in cathode size, and (3) magnetic field modification. Both (2) and (3) improved the trench etch rate uniformity. For better process control, a blue laser diffraction etch rate monitor system has been demonstrated for 0.8 micrometers X 4 to approximately 7 micrometers 16 Mb trenches using two chemistries, HBr/SiF4/He-O2 and HBr/NF3/He-O2. By means of process optimization, both HBr/SiF4/He-O2 and HBr/NF3/He-O2 chemistries are able to meet the requirements for 16 Mb trench.

Paper Details

Date Published: 16 April 1993
PDF: 13 pages
Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142935
Show Author Affiliations
Jim Su, Applied Materials, Inc. (United States)
Graham W. Hills, Applied Materials, Inc. (United States)
Manush Birang, Applied Materials, Inc. (United States)
James A. Bondur, Applied Materials, Inc. (United States)
T. Fukamachi, Applied Materials Japan (Japan)
S. Ohki, Applied Materials Japan (Japan)
S. Kitamura, Applied Materials Japan (Japan)

Published in SPIE Proceedings Vol. 1803:
Advanced Techniques for Integrated Circuit Processing II
James A. Bondur; Gary Castleman; Lloyd R. Harriott; Terry R. Turner, Editor(s)

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