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Proceedings Paper

Controlling polymer formation during polysilicon etching in a magnetically enhanced reactive ion etcher
Author(s): Heidi L. Denton; Robert M. Wallace
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Paper Abstract

Studies were conducted in a magnetically enhanced reactive ion etcher to understand the material and process related issues affecting polymer formation during a polysilicon etch. Samples consist of POCl3 doped and undoped polysilicon which are patterned with two different types of photoresist. Processing is done using a Cl2/HBr chemistry with some of the experiments having oxygen added during the over etch step of the process. Scanning electron microscope results indicate two very distinct structures exist on the various samples. One that exhibits a more uniform polymer and the other that leaves an `ear' shaped polymer formation. These various structures also are analyzed using x-ray photoelectron spectroscopy. This analysis indicates the polymers to be a combination of silicon, oxygen, and carbon. Based on this study it is apparent that the type of material, photoresist, and process variables significantly influence the polymer formation during the etching of undoped and doped polysilicon with an HBr/Cl2 chemistry.

Paper Details

Date Published: 16 April 1993
PDF: 9 pages
Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142931
Show Author Affiliations
Heidi L. Denton, Texas Instruments Inc. (United States)
Robert M. Wallace, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 1803:
Advanced Techniques for Integrated Circuit Processing II
James A. Bondur; Gary Castleman; Lloyd R. Harriott; Terry R. Turner, Editor(s)

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