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Proceedings Paper

Profiles and chemistry effects in polysilicon and tungsten silicide EPROM 'stack' etching
Author(s): Daniel L. Flamm; Reza M. Sadjadi; Jeff R. Perry
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Paper Abstract

Specialized EPROM cell architectures lead to a host of new difficulties during pattern transfer. Results from patterning stacked gate structure multilayers of WSix, polysilicon, SiO2 and Si3N4 with etching chemistries containing HBr and Cl2 are examined. Strong effects arising from changes in feed composition and wafer temperature are discussed along with some basic mechanisms involved in these interactions.

Paper Details

Date Published: 16 April 1993
PDF: 12 pages
Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142922
Show Author Affiliations
Daniel L. Flamm, Lawrence Livermore National Lab. (United States)
Reza M. Sadjadi, National Semiconductor Corp. (United States)
Jeff R. Perry, National Semiconductor Corp. (United States)

Published in SPIE Proceedings Vol. 1803:
Advanced Techniques for Integrated Circuit Processing II
James A. Bondur; Gary Castleman; Lloyd R. Harriott; Terry R. Turner, Editor(s)

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