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Proceedings Paper

New dry-development process of trilayer resist systems for advanced lithography
Author(s): Olivier P. Joubert; C. Martinet; Jacques H. Pelletier; Michel J. Pons; Jean-Marc Francou; Jean-Pierre Panabiere; Andre P. Weill; Serge V. Tedesco; Francoise Vinet; Thierry Mourier
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Paper Abstract

A parametric study of the pattern transfer step in a trilevel resist system using oxygen-based plasmas has been made using a distributed electron cyclotron resonance reactor with independent rf biasing. In pure oxygen plasmas, critical dimension loss is always present in the O2 pressure and ion bombardment energy ranges investigated. The mechanisms most likely to be responsible for these defects during the pattern transfer process are presented and discussed. Perfect anisotropy can only be obtained at substrate temperatures below -60 degree(s)C. A novel plasma etching process based on sidewall passivation by sulfur is proposed using SO2/O2 mixtures. Perfect anisotropy without critical dimension loss is obtained at room temperature by using an 80% SO2/20% O2 mixture and a moderate ion bombardment energy. The ultimate resolution using this new plasma process in conjunction with deep UV exposure and a phase-shift mask is presented.

Paper Details

Date Published: 16 April 1993
PDF: 13 pages
Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142920
Show Author Affiliations
Olivier P. Joubert, CNET-CNS (France)
C. Martinet, CNET-CNS (France)
Jacques H. Pelletier, CNET-CNS (France)
Michel J. Pons, CNET-CNS (France)
Jean-Marc Francou, CNET-CNS (France)
Jean-Pierre Panabiere, CNET-CNS (France)
Andre P. Weill, CNET-CNS (France)
Serge V. Tedesco, CEA-LETI (France)
Francoise Vinet, CEA-LETI (France)
Thierry Mourier, CEA-LETI (France)


Published in SPIE Proceedings Vol. 1803:
Advanced Techniques for Integrated Circuit Processing II
James A. Bondur; Gary Castleman; Lloyd R. Harriott; Terry R. Turner, Editor(s)

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