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Proceedings Paper

Transformer-coupled plasma technology for sub-half-micron etching
Author(s): John P. Holland; Brendan R. Richardson; E. Bogle; Wai-Man Li; Yosias Melaku; Huong T. Nguyen; Eric A. Peltzer; Duane C. Gates
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Paper Abstract

A transformer coupled plasma (TCP) source has been developed for use in the etching of polysilicon films. The TCP is a planar, inductive source which can achieve high density operation (> 1012 cm-3) over a large pressure range (1 - 100 mT). The etching characteristics of this source are described and process trends for etch rate, selectivity, and profile microloading are presented. Process requirements for polysilicon films with sub- half micron features are achieved using the TCP source by separately controlling the plasma parameters and the wafer bias.

Paper Details

Date Published: 16 April 1993
PDF: 13 pages
Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142919
Show Author Affiliations
John P. Holland, Lam Research Corp. (United States)
Brendan R. Richardson, Lam Research Corp. (United States)
E. Bogle, Lam Research Corp. (United States)
Wai-Man Li, Lam Research Corp. (United States)
Yosias Melaku, Lam Research Corp. (United States)
Huong T. Nguyen, Lam Research Corp. (United States)
Eric A. Peltzer, Lam Research Corp. (United States)
Duane C. Gates, Lam Research Corp. (United States)


Published in SPIE Proceedings Vol. 1803:
Advanced Techniques for Integrated Circuit Processing II
James A. Bondur; Gary Castleman; Lloyd R. Harriott; Terry R. Turner, Editor(s)

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