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Proceedings Paper

MORI (TM) high-density rf plasma source etching of polysilicon and metal films on wafers
Author(s): Gregor A. Campbell; Alexis de Chambrier; Frank Mendoza; N. William Parker; David I. C. Pearson; Ken Tokunaga; Tsutomu Tsukada; Supika Mashiro; H. Nogami
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Paper Abstract

Etching of patterned doped poly-Si and of patterned W or Al metal wafers with high selectivity, high anisotropy, and high rate is achieved using the newly developed MORI rf plasma source. The source operates at low pressure (typically 1 - 3 mtorr) and at 13.56 MHz while achieving high efficiency through the generation of an m equals 0 Whistler wave often referred to as the m equals 0 helicon wave. The chlorine etch selectivity of poly-Si to SiO2 can exceed 100, the selectivity of poly-Si to photoresist can exceed 10, and the poly-Si etch rate ranges from 2500 A/m to about 4000 A/m, depending upon wafer characteristics. The uniformity is less than 2% (1 sigma) and the chlorine ion saturation current exceeds 15 mA/cm2 above the wafer location. Uniform, anisotropic etching of Al-1% Si-0.5% Cu using pure Cl2 or Cl2-(5-20%) BCl3 at 1.5 - 3 mtorr achieves rates exceeding 6000 A/m with selectivity to photoresist (PR) of 9 and selectivity to oxide of 22 using a wafer rf bias power of 30 w at 13.56 MHz. Similarly excellent results are found in the etching of patterned W using SF6 at 3 mtorr. Etch rates exceed 2500 A/m with selectivity to PR greater than 2 and selectivity to oxide greater than 10.

Paper Details

Date Published: 16 April 1993
PDF: 9 pages
Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142916
Show Author Affiliations
Gregor A. Campbell, Plasma & Materials Technologies, Inc. (United States)
Alexis de Chambrier, Plasma & Materials Technologies, Inc. (United States)
Frank Mendoza, Plasma & Materials Technologies, Inc. (United States)
N. William Parker, Plasma & Materials Technologies, Inc. (United States)
David I. C. Pearson, Plasma & Materials Technologies, Inc. (United States)
Ken Tokunaga, Plasma & Materials Technologies, Inc. (United States)
Tsutomu Tsukada, Anelva Corp. (Japan)
Supika Mashiro, Anelva Corp. (Japan)
H. Nogami, Anelva Corp. (Japan)


Published in SPIE Proceedings Vol. 1803:
Advanced Techniques for Integrated Circuit Processing II
James A. Bondur; Gary Castleman; Lloyd R. Harriott; Terry R. Turner, Editor(s)

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