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Proceedings Paper

Development of controlling the self-bias voltage and its appraisal by means of estimating ion damages
Author(s): Takeo Ohte; Makoto Goto; Minoru Sugawara
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Paper Abstract

We focus on discussing a method to reduce the self-bias voltage and applying this method to a plasma etcher to improve reduction of ion damages. We have developed a technique that can reduce the self-bias voltage without disturbing the main plasma by using a supplemental electron flow from the powered electrode to the plasma through the sheath. We have concluded experimentally that the effects of the supplemental electron flow on the main plasma parameters is not serious and damage induced to films is reduced considerably. The experiments were carried out in an rf discharge chamber. It may be certain from the results that the disturbance on the plasma parameters created by the variable self-bias voltage is minimal. The damage to the films induced by its ion bombardment is reduced by approximately one-half, when the self-bias voltage was controlled from -120 V to -98 V.

Paper Details

Date Published: 16 April 1993
PDF: 8 pages
Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142912
Show Author Affiliations
Takeo Ohte, Gunma College of Technology (Japan)
Makoto Goto, Gunma Polytechnic College (Japan)
Minoru Sugawara, Gunma Univ. (Japan)


Published in SPIE Proceedings Vol. 1803:
Advanced Techniques for Integrated Circuit Processing II
James A. Bondur; Gary Castleman; Lloyd R. Harriott; Terry R. Turner, Editor(s)

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