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Proceedings Paper

Edge effects in phase-shifting masks for 0.25-µm lithography
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Paper Abstract

The impact on image quality of scattering from phase-shifter edges and of interactions between phase-shifter and chrome edges is assessed using rigorous electromagnetic simulation. Effects of edge taper in phase-shift masks, spacing between phase-shifter and chrome edges, small outrigger features with a trench phase-shifter, and of the repair of phase defects by etching to 360 degree(s) are considered. Near field distributions and diffraction efficiencies are examined and images are compared with more approximate results from the commonly used Hopkins' theory of imaging.

Paper Details

Date Published: 26 March 1993
PDF: 7 pages
Proc. SPIE 1809, 12th Annual BACUS Symposium on Photomask Technology and Management, (26 March 1993); doi: 10.1117/12.142143
Show Author Affiliations
Alfred K. K. Wong, Univ. of California/Berkeley (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 1809:
12th Annual BACUS Symposium on Photomask Technology and Management
Scott Landstrom; Richard LaFrance, Editor(s)

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