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Proceedings Paper

Performance and perspective of the newly developed high-accuracy mask-making EB lithography system JBX-7000MV designed for 64M DRAM production
Author(s): Tadashi Komagata; Hitoshi Takemura; Nobou Goto; Ron Espeseth; Michael Hassel Shearer
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Paper Abstract

The semiconductor industry has directed its course toward volume production of 64M DRAMs. Feature sizes of typical 64M DRAM are 0.3 to 0.4 micrometers , and the linewidth and positioning accuracies required for 5X reticle production are both 0.05 micrometers . To respond to these requirements, JEOL has developed an electron beam lithography system for reticle making, JBX-7000MV, which incorporates improved variable shaped beam optics to assure high speed and highly accurate pattern writing. The high accuracy writing was made possible by: (1) reducing the pattern data increment and correction increments by 1/2; (2) applying a field shift writing method; and (3) a new substrate holder insensitive to the weight of a mask. This paper introduces the JBX-7000MV and its capabilities, and discusses the issues required for second generation 64M DRAM reticles. Anticipated improvements expected to be integrated in the JBX-7000MV to meet these requirements are discussed.

Paper Details

Date Published: 26 March 1993
PDF: 15 pages
Proc. SPIE 1809, 12th Annual BACUS Symposium on Photomask Technology and Management, (26 March 1993); doi: 10.1117/12.142137
Show Author Affiliations
Tadashi Komagata, JEOL, Ltd. (Japan)
Hitoshi Takemura, JEOL, Ltd. (Japan)
Nobou Goto, JEOL, Ltd. (Japan)
Ron Espeseth, JEOL USA, Inc. (United States)
Michael Hassel Shearer, JEOL USA, Inc. (United States)

Published in SPIE Proceedings Vol. 1809:
12th Annual BACUS Symposium on Photomask Technology and Management
Scott Landstrom; Richard LaFrance, Editor(s)

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