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Proceedings Paper

Vector modeling of defects and defect repair for phase-shifting masks
Author(s): Kevin D. Lucas; Andrzej J. Strojwas
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Paper Abstract

Phase shifting masks (PSMs) have shown great promise for extending resolution in optical lithography. However, the production of defect free PSMs is a challenging task. Because of their increased sensitivity to process faults and defects, production difficulty is a major hurdle to overcome before PSMs become commonplace in semiconductor manufacturing. Rigorous simulation of PSM defects and production faults is a useful tool for understanding the sensitivities and limitations of this new technology. The complex topographies and non- planarities of PSMs require vector modeling to properly consider light scattering effects. Scalar models such as SPLAT cannot investigate scattering due to high edges, thick layers, and changes in refractive index. We are investigating PSMs using the rigorous 2-D photolithography simulator METROPOLE. In particular, we are studying the advantages and limitations of two new techniques for PSM defect repair. The first technique uses a double shifting structure, the second uses an electron beam sensitive silicon-containing resist.

Paper Details

Date Published: 26 March 1993
PDF: 12 pages
Proc. SPIE 1809, 12th Annual BACUS Symposium on Photomask Technology and Management, (26 March 1993); doi: 10.1117/12.142136
Show Author Affiliations
Kevin D. Lucas, Carnegie Mellon Univ. (United States)
Andrzej J. Strojwas, Carnegie Mellon Univ. (United States)


Published in SPIE Proceedings Vol. 1809:
12th Annual BACUS Symposium on Photomask Technology and Management
Scott Landstrom; Richard LaFrance, Editor(s)

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