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Proceedings Paper

Laser-assisted epitaxy of III-V compounds
Author(s): U. Sudarsan; Rajendra Solanki
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Paper Abstract

Laser-assisted epitaxial growth of III-V semiconductors has been achieved using both pyrolytic and photolytic reactions. A focused beam from an argon laser operating at 514.5 nm was used to 'direct-write' epitaxial microstructures using the pyrolytic process, whereas an excimer laser was utilized to examine the photolytic process. Dependence of the film properties on the laser parameters is investigated. This discussion is limited to homo- and heteroepitaxy of GaP.

Paper Details

Date Published: 16 March 1993
PDF: 11 pages
Proc. SPIE 1804, Rapid Thermal and Laser Processing, (16 March 1993); doi: 10.1117/12.142094
Show Author Affiliations
U. Sudarsan, Oregon Graduate Institute (United States)
Rajendra Solanki, Oregon Graduate Institute (United States)

Published in SPIE Proceedings Vol. 1804:
Rapid Thermal and Laser Processing
Dim-Lee Kwong; Heinrich G. Mueller, Editor(s)

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