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Proceedings Paper

In-situ temperature control for RTP via thermal expansion measurement
Author(s): Bruce W. Peuse; Allan Rosekrans; Kenneth Snow
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Paper Abstract

A new method of temperature control for rapid thermal processing of silicon wafers is presented whereby in-situ wafer temperature is determined by measurement of wafer thermal expansion via a laser autofocus mechanism. Various potential error sources are considered including wafer bow, effects of wafer doping and crystal orientation. Results are provided showing that variations in crystalline orientation and dopant levels have no measurable effect on expansion of the silicon substrate, allowing a direct correlation of wafer expansion to temperature. The expansion measurement technique and implementation into a rapid thermal processing system as a temperature control is described. Preliminary data show the wafer to wafer repeatability of temperature is 1% (3-(sigma) ) using wafer expansion as the control.

Paper Details

Date Published: 16 March 1993
PDF: 10 pages
Proc. SPIE 1804, Rapid Thermal and Laser Processing, (16 March 1993); doi: 10.1117/12.142092
Show Author Affiliations
Bruce W. Peuse, Peak Systems, Inc. (United States)
Allan Rosekrans, Peak Systems, Inc. (United States)
Kenneth Snow, Peak Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 1804:
Rapid Thermal and Laser Processing
Dim-Lee Kwong; Heinrich G. Mueller, Editor(s)

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