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Proceedings Paper

GeSi infrared photodetectors grown by rapid thermal CVD
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Paper Abstract

GexSi1-x infrared detectors grown by Rapid Thermal CVD are demonstrated. External quantum efficiency of 7% at (lambda) equals 1.32 micrometers and eye-diagram at 1.5 Gbit/s are obtained for Ge.29Si.71 waveguide pin detectors. It is shown that external quantum efficiency is limited by fiber to waveguide coupling efficiency. These, along with system considerations suggest that with further improvements, such devices can be used in Si- based monolithic optoelectronic receivers.

Paper Details

Date Published: 16 March 1993
PDF: 13 pages
Proc. SPIE 1804, Rapid Thermal and Laser Processing, (16 March 1993); doi: 10.1117/12.142080
Show Author Affiliations
Bahram Jalali, AT&T Bell Labs. (United States)
Luis Naval, AT&T Bell Labs. (United States)
Anthony F. J. Levi, AT&T Bell Labs. (United States)
Pat G. Watson, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 1804:
Rapid Thermal and Laser Processing
Dim-Lee Kwong; Heinrich G. Mueller, Editor(s)

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