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Proceedings Paper

Post-annealing effect in HgCdTe photodiodes
Author(s): Guo Min Yu
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Paper Abstract

The post-annealing effect in HgCdTe photodiodes ((lambda) c < 3 micrometers ) has been reported. After the post-annealing proceeding, the current responsibility of the photodiodes has no change. However, the noise current of the photodiodes has considerable changes. For the photodiodes with small noise current (in < 300 fA) before the post-annealing, the noise current increases after the post-annealing; for the photodiodes with big noise current (in > 300 fA) before the post-annealing, the noise current obviously reduces. The probable mechanism has been analyzed.

Paper Details

Date Published: 1 April 1993
PDF: 5 pages
Proc. SPIE 1982, Photoelectronic Detection and Imaging: Technology and Applications '93, (1 April 1993); doi: 10.1117/12.142011
Show Author Affiliations
Guo Min Yu, Jinhang Technical Physics Research Institute (China)


Published in SPIE Proceedings Vol. 1982:
Photoelectronic Detection and Imaging: Technology and Applications '93

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