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Proceedings Paper

Optimization of the GaAs-delta-doped p-i-n quantum-well APD
Author(s): Yang Wang; Kevin F. Brennan
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Paper Abstract

We examine the basic design issues in the optimization of a GaAs delta-doped quantum well avalanche photodiode structure using a theoretical analysis based on an ensemble Monte Carlo simulation. The device is a variation of the p-i-n doped quantum well structure previously described in the literature. It has the same low-noise, high-gain, and high-bandwidth features as the p-i-n doped quantum well device. However, the use of delta doping provides far greater control of the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed device will operate at higher gain levels at very low noise than devices previously developed.

Paper Details

Date Published: 1 April 1993
PDF: 7 pages
Proc. SPIE 1982, Photoelectronic Detection and Imaging: Technology and Applications '93, (1 April 1993); doi: 10.1117/12.142005
Show Author Affiliations
Yang Wang, Georgia Institute of Technology (United States)
Kevin F. Brennan, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 1982:
Photoelectronic Detection and Imaging: Technology and Applications '93

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