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Proceedings Paper

Thin-film high-gain photodetector and switching devices using a-Si:H and a-SiC:H multilayers
Author(s): Yoshinori Hatanaka; Narihiro Morosawa; Masakazu Suzuki; Yoichiro Nakanishi
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Paper Abstract

High quality amorphous silicon carbon (a-SiC:H) films with the wide bandgap of 2.4 eV are developed by using rf glow discharge deposition from highly hydrogen diluted C2H4 and SiH4. It has been shown that multi-layer photo-diodes using a-Si:H and a-SiC:H tend to have higher gain than 10, and special constructions of three multi-layers presented switching phenomena like a thyrister switch.

Paper Details

Date Published: 1 April 1993
PDF: 8 pages
Proc. SPIE 1982, Photoelectronic Detection and Imaging: Technology and Applications '93, (1 April 1993); doi: 10.1117/12.142000
Show Author Affiliations
Yoshinori Hatanaka, Shizuoka Univ. (Japan)
Narihiro Morosawa, Shizuoka Univ. (Japan)
Masakazu Suzuki, Shizuoka Univ. (Japan)
Yoichiro Nakanishi, Shizuoka Univ. (Japan)

Published in SPIE Proceedings Vol. 1982:
Photoelectronic Detection and Imaging: Technology and Applications '93
LiWei Zhou, Editor(s)

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