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Proceedings Paper

Monolithic integration of surface-emitting harmonic generator with InGaAs/GaAs single-quantum-well laser
Author(s): Hongxing Dai; Siegfried Janz; Richard J. F. Normandin; Margaret Buchanan
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Paper Abstract

We demonstrate active surface-emitting sum-frequency generators based on monolithic integration of InGaAs/GaAs single quantum well lasers and multilayer AlxGa1-xAs nonlinear waveguides. As broad area lasers with uncoated facets, threshold current densities as low as 87.5 A/cm2 have been obtained for a cavity length of 3.3 mm at 300 K. A differential internal quantum efficiency of 71% and a waveguide loss of 3.2 cm-1 have been measured from the room temperature light-current (L-I) characteristics. With an active/passive segmented cavity operating at 0.984 micrometers , coherent sum-frequency light at 0.51 micrometers was radiated from the etched-off passive segment surface when coupling 1.06 micrometers light into the cavity as the TM guided wave to interact with the TE SQW laser mode. The measured conversion efficiency in terms of the nonlinear cross section Anl is about 2 X 10-7 W-1 which agrees well with the calculated value. Potential applications of the integrated devices are briefly addressed.

Paper Details

Date Published: 6 April 1993
PDF: 9 pages
Proc. SPIE 1794, Integrated Optical Circuits II, (6 April 1993); doi: 10.1117/12.141912
Show Author Affiliations
Hongxing Dai, National Research Council Canada (Canada)
Siegfried Janz, National Research Council Canada (Canada)
Richard J. F. Normandin, National Research Council Canada (Canada)
Margaret Buchanan, National Research Council Canada (Canada)


Published in SPIE Proceedings Vol. 1794:
Integrated Optical Circuits II
Ka-Kha Wong, Editor(s)

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