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Proceedings Paper

Effect of diffusion and surface recombination on the frequency-dependent characteristics of an OPFET
Author(s): Vinaya Kumar Singh
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Paper Abstract

Analytical studies have been made on the effect of diffusion and surface recombination on the frequency dependent characteristics of an ion-implanted GaAs optical field effect transistor. Modulated optical generation and voltage dependent depletion layer width in the active region have been considered whereas photovoltaic effect is ignored in this analysis. Result shows that drain-source current decreases with the increases of modulated signal frequency but diffusion effect increases the modulating frequency range from c.m. to m.m. wavelength. Moreover, I- V changes significantly with the trap center density only when Nr >= 1023/m2 with diffusion effect and >= 1020/m2 without diffusion effect at a particular dimension of the device. This model may be very much useful to measure the sensitivity of the device in terms of trap center density and modulating frequency.

Paper Details

Date Published: 26 February 1993
PDF: 5 pages
Proc. SPIE 1790, Analog Photonics, (26 February 1993); doi: 10.1117/12.141703
Show Author Affiliations
Vinaya Kumar Singh, Banaras Hindu Univ. (United States)


Published in SPIE Proceedings Vol. 1790:
Analog Photonics
Andrew R. Pirich; Paul Sierak, Editor(s)

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