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Proceedings Paper

Confined and interface optical phonons in quantum wells and quantum wires
Author(s): Michael A. Stroscio; Gerald J. Iafrate; Ki Wook Kim; Michael A. Littlejohn; Amit R. Bhatt; Mitra B. Dutta
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Paper Abstract

As device dimensions in nanoscale structures and mesoscopic devices are reduced, the characteristics and interactions of dimensionally-confined longitudinal-optical (LO) phonons deviate substantially from those of bulk polar semiconductors. This account emphasizes the properties of LO-phonon modes arising in polar-semiconductor quantum wells and quantum wires. In particular, this review highlights recent results of both microscopic and macroscopic models of LO phonons in polar-semiconductor quantum wells and quantum wires with a variety of cross sectional geometries. Emphasis is placed on the dielectric continuum model of confined and interface phonons. In addition, this review provides brief discussions of how carrier-LO-phonon interactions change in the presence of dynamical screening. Finally, the use of metal-semiconductor heterointerfaces to reduce unwanted inelastic scattering in nanoscale electronic and optoelectronic structures is discussed.

Paper Details

Date Published: 28 January 1993
PDF: 17 pages
Proc. SPIE 10267, Integrated Optics and Optoelectronics: A Critical Review, 102670M (28 January 1993); doi: 10.1117/12.141409
Show Author Affiliations
Michael A. Stroscio, U.S. Army Research Office (United States)
Gerald J. Iafrate, U.S. Army Research Office (United States)
Ki Wook Kim, North Carolina State Univ. (United States)
Michael A. Littlejohn, North Carolina State Univ. (United States)
Amit R. Bhatt, North Carolina State Univ. (United States)
Mitra B. Dutta, U.S. Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 10267:
Integrated Optics and Optoelectronics: A Critical Review
Ka Kha Wong; Manijeh Razeghi, Editor(s)

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