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Proceedings Paper

Semiconductors for the visible and ultraviolet
Author(s): Max N. Yoder
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Paper Abstract

Between bandgap energies of 1.77 and 3.35 electron volts (eV) lies the visible spectrum while the ultraviolet (UV) spectrum lies between 3.35 and 12.39 eV. Over 99% of all semiconductor research and development expenditures during the past 50 years has been expended on semiconductor materials exhibiting bandgaps below these ranges. Many good reasons for the relative lack of attention to these higher bandgap semiconductors exist and are addressed herein, but various new growth techniques and incentives have resulted in research funding support in these materials recently experiencing greater increases than any other category of semiconductors.

In addition to the obvious applications of visible and UV light emission and detection, these materials offer other significant advantages including negative electron affinity, extremely high dielectric strength, low dielectric constants, very high charge carrier velocities (at high electric field strengths) and extremely low intrinsic leakage. The latter attribute enables such new concepts as non-volatile memories and extremely low loss charge coupled devices.

Paper Details

Date Published: 28 January 1993
PDF: 21 pages
Proc. SPIE 10267, Integrated Optics and Optoelectronics: A Critical Review, 102670F (28 January 1993); doi: 10.1117/12.141402
Show Author Affiliations
Max N. Yoder, Office of Naval Research (United States)


Published in SPIE Proceedings Vol. 10267:
Integrated Optics and Optoelectronics: A Critical Review
Ka Kha Wong; Manijeh Razeghi, Editor(s)

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