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Recent progress in atomic layer epitaxy
Author(s): S. M. Bedair
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Paper Abstract

Atomic layer epitaxy continues to emerge as a promising epitaxial technique when atomic layer thickness control is required in semiconductors device structures. However, ALE still faces several problems such as low growth rate, relatively high carbon background and difficulties in growing high bandgap ternary alloys. This paper will outline recent progress in these areas illustrated by the state-of-art devices recently grown by the ALE technique.

Paper Details

Date Published: 27 June 2017
PDF: 27 pages
Proc. SPIE 10267, Integrated Optics and Optoelectronics, 1026702 (27 June 2017); doi: 10.1117/12.141398
Show Author Affiliations
S. M. Bedair, North Carolina State Univ. (United States)

Published in SPIE Proceedings Vol. 10267:
Integrated Optics and Optoelectronics
Ka Kha Wong; Manijeh Razeghi, Editor(s)

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