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Proceedings Paper

Characterization of Si3N4/SiO2 optical channel waveguides by photon scanning tunneling microscopy
Author(s): Yan Wang; Mona H. Chudgar; Howard E. Jackson; Jeffrey S. Miller; Gregory N. De Brabander; Joseph T. Boyd
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Paper Abstract

Photon scanning tunneling microscopy (PSTM) is used to characterize Si3N4/Si02 optical channel waveguides being used for integrated optical-micromechanical sensors. PSTM utilizes an optical fiber tapered to a fine point which is piezoelectrically positioned to measure the decay of the evanescent field intensity associated with the waveguide propagating mode. Evanescent field decays are recorded for both ridge channel waveguides and planar waveguide regions. Values for the local effective refractive index are calculated from the data for both polarizations and compared to model calculations.

Paper Details

Date Published: 2 March 1993
PDF: 4 pages
Proc. SPIE 1793, Integrated Optics and Microstructures, (2 March 1993); doi: 10.1117/12.141222
Show Author Affiliations
Yan Wang, Univ. of Cincinnati (United States)
Mona H. Chudgar, Univ. of Cincinnati (United States)
Howard E. Jackson, Univ. of Cincinnati (United States)
Jeffrey S. Miller, Univ. of Cincinnati (United States)
Gregory N. De Brabander, Univ. of Cincinnati (United States)
Joseph T. Boyd, Univ. of Cincinnati (United States)


Published in SPIE Proceedings Vol. 1793:
Integrated Optics and Microstructures
Massood Tabib-Azar; Dennis L. Polla, Editor(s)

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