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Proceedings Paper

Effects of 5.5-MeV proton irradiation on reliability of a strained-quantum-well laser diode and a multiple-quantum-well broadband light-emitting diode
Author(s): Bruce D. Evans; C. A. Gossett; Harold E. Hager; Chi-Shain Hong; Barrie W. Hughlock
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Paper Abstract

Two classes of quantum-well-based fiber-optic light sources are examined for degradation under 5.5-MeV proton irradiation as part of an evaluation study for satellite applications. Contrary to previous experience with bulk active area heterostructure light-emitting diodes and laser diodes, it was found that these quantum-well light-emitting diodes are more tolerant of proton irradiation than quantum-well-based lasers. This is the case when the quantum-well light-emitting diode structure allows operation far into gain saturation and the cavity is lossy compared with the quantum-well lasers where gain is more sensitive to current density and with low-loss cavities. Experimental damage factors were measured for performance parameters of these quantum-well photonic devices and found to be similar to those previously reported for carrier removal rates in GaAs-based electronic structures.

Paper Details

Date Published: 25 February 1993
PDF: 10 pages
Proc. SPIE 1791, Optical Materials Reliability and Testing: Benign and Adverse Environments, (25 February 1993); doi: 10.1117/12.141166
Show Author Affiliations
Bruce D. Evans, Boeing Defense & Space Group (United States)
C. A. Gossett, Boeing Defense & Space Group (United States)
Harold E. Hager, Boeing Defense & Space Group (United States)
Chi-Shain Hong, Boeing Defense & Space Group (United States)
Barrie W. Hughlock, Boeing Defense & Space Group (United States)

Published in SPIE Proceedings Vol. 1791:
Optical Materials Reliability and Testing: Benign and Adverse Environments
Roger A. Greenwell; Dilip K. Paul, Editor(s)

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