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Proceedings Paper

Modeling of transport and film growth over patterned substrates
Author(s): Daniel G. Coronell; Klavs F. Jensen
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Paper Abstract

An analysis of transport and film growth over masked and nonplanar substrates is presented. Special emphasis is placed upon modelling strategies with regard to whether the gas is in the viscous or rarefied flow regimes and the appropriate assumptions which can be made to simplify the model. A coupled volume and surface diffusion model is used to describe selective and nonplanar growth in the viscous flow regime. Results of a parametric study suggest that diffusion in the gas phase is responsible for the growth rate enhancements and nonuniformity which accompany patterned substrate growth. The direct simulation Monte Carlo method is used to model rarefied gas flows and deposition over patterned substrates where the mean free path of the gas molecules is of the same order or larger than the characteristic feature size.

Paper Details

Date Published: 16 February 1993
PDF: 11 pages
Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141116
Show Author Affiliations
Daniel G. Coronell, Massachusetts Institute of Technology (United States)
Klavs F. Jensen, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 1788:
Sources and Detectors for Fiber Communications
Stephen D. Hersee, Editor(s)

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